Spin Transfer Technologies (STT), the developer of breakthrough Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), is sampling fully functional ST-MRAM devices to multiple customers in North America and Asia. The sample devices utilize 80nm perpendicular magnetic tunnel junctions (MTJs), the latest generation of MRAM technology. The company is delivering these devices on evaluation ...
Read full article: Spin Transfer Technologies samples ST-MRAM
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