Imec has achieved promising device results with a InGaAs-only TFET (tunnel field-effect transistor) – achieving a sub-60 mV/decade sub-threshold swing at room temperature. This positions TFETS as promising candidates to replace MOSFET transistors in future chip generations for ultralow-power applications operating on ultralow supply voltages. TFETs exploit a different mechanism to inject carriers than MOSFETs, ...
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