Integrated GaN half bridge switches 600V at 3MHz

The Fraunhofer Institute for Applied Solid State Physics (IAF) has developed the first integrated 600V GaN half-bridge circuit. “A switching frequency of up to 3MHz allows us to achieve a much greater power density,” said Fraunhofer research associate Richard Reiner. On the die is two 600V 120mΩ GaN HETS (high electron mobility transistors) and two ...

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