X-Fab has made its first GaN-on-Silicon devices made on 200mm wafers. The wafers used substrates fabricated at Exagan’s 200-mm epi-manufacturing facility in Grenoble, France. Exagan was founded in 2014 by CEA-Leti and Soitec to pursue GaN technology. X-Fab and Exagan have been working on the GaN-on-Silicon project since 2015. These epi wafers meet the physical ...
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