Spin Transfer Technologies, (STT) and Tokyo Electron (TEL) are to collaborate on developing manufacturing processes for ST-MRAM. The combination of STT’s ST-MRAM technology and TEL’s PVD MRAM deposition tool will allow the companies to develop processes for ST-MRAM. STT is contributing its perpendicular magnetic tunnel junction (pMTJ) design and device fabrication technology, and TEL is ...
This story continues at STT and Tokyo Electron to co-develop ST-MRAM manufacturing process
Or just read more coverage at Electronics Weekly
No comments:
Post a Comment