New Jersey-based UnitedSiC has introduced a silicon carbide transistor that can switch 1.2kV and 47A at 100degC. Unusually for SIC transistors, the gate is fully compatible with existing IGBT drivers, and has a 5V gate threshold – avoiding accidental turn-on issues associated with the lower thresholds of SiC mosfets. Called UJ3C120040K3S, its gate characteristics come ...
This story continues at 40mOhm silicon carbide transistor switches 1,200V and 50A
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