Jedec’s new wide bandgap committee has issued its first standards paper – JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices. JEP173 covers GaN power FETs, providing a method for the consistent measurement of drain-to-source resistance in the ON-state (RDS(ON)) encompassing dynamic effects. These dynamic effects are characteristic of GaN power FETs, ...
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