Sunday, April 7, 2019

Colloidal quantum dots could advance photodetectors

IR optoelectronics, traditionally based on III-V semiconductors, could be based on colloidal quantum dots which would overcome III-V’s disadvantage of  CMOS incompatibility, says Barcelona’s Institute of Photonics (ICFO). ICFO researchers have discovered that by controlling defects in materials one can extend the semiconductor’s spectral reach beyond its bandgap, expanding thereby the material availability for the ...

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