Imec has demo-ed scaled strained germanium p-channel Gate-All-Around (GAA) FETs with a sub-10nm diameter. High-mobility materials such as germanium and III-V have been considered as potential solutions for deeply scaled devices, due to their higher intrinsic carrier mobility. However, these materials have a larger permittivity and a smaller bandgap than silicon, making it more difficult ...
Read full article: Imec makes Ge GAA FET.
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