Monday, August 27, 2018

Fujitsu triples output power of GaN HEMTs

Fujitsu has  developed a crystal structure that  increases both current and voltage in GaN HEMTs, effectively tripling the output power of transistors used for transmitters in the microwave band.  GaN HEMT technology can serve as a power amplifier for equipment such as weather radar.  By applying the new technology to this area, it is expected ...

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