Imec has developed 200V and 650V normally-off/enhancement mode (e-mode) on 200mm/8-inch GaN-on-Silicon wafers, achieving a very low dynamic Ron dispersion (below 20 percent) and state-of-the-art performance and reproducibility. “Having pioneered the development of GaN-on-Si power device technology on large diameter substrates (200mm/8-inch), Imec now offers companies access to its normally-off/e-mode GaN power device technology through ...
Read full article: Imec offers GaN-on-Si fab or technology transfer.
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