Fujitsu has developed a crystal structure that increases both current and voltage in GaN HEMTs, effectively tripling the output power of transistors used for transmitters in the microwave band. GaN HEMT technology can serve as a power amplifier for equipment such as weather radar. By applying the new technology to this area, it is expected ...
This story continues at Fujitsu triples output power of GaN HEMTs
Or just read more coverage at Electronics Weekly
No comments:
Post a Comment