The University of Minnesota has sputtered a ‘topological insulator’ – a solid that conducts on its surface but not inside – avoiding the single crystal growth process or molecular beam epitaxy normally needed. Bismuth selenide (Bi2Se3) is the material, magnetron-sputtered into a thin film of particles <6nm across in hetero-structures with CoFeB – “Using the sputtering ...
This story continues at Good old sputtering might be a route to MRAM
Or just read more coverage at Electronics Weekly
No comments:
Post a Comment