Bismuth-antimony (BiSb) alloys are the best candidate for the first industrial application of topological insulators, a step towards spin-orbit torque magneto resistive memory (SOT-MRAM), with the potential to replace existing memory, according to scientists at the Tokyo Institute of Technology (Tokyo Tech). Led by Pham Nam Hai, the team has developed thin films of BiSb for a ...
This story continues at Tokyo Tech moots BiSb for next-gen MRAM
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